IRG7U50HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7U50HF12A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 34 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
310W
Configuration
Half Bridge
Power - Max
310W
Input
Standard
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
100A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
6nF
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
6nF @ 25V
RoHS Status
RoHS Compliant
IRG7U50HF12A Product Details
IRG7U50HF12A Description
IRG7U50HF12A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7U50HF12A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.