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IRG7U50HF12A

IRG7U50HF12A

IRG7U50HF12A

Infineon Technologies

IRG7U50HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7U50HF12A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 310W
Configuration Half Bridge
Power - Max 310W
Input Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 6nF
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 6nF @ 25V
RoHS Status RoHS Compliant
IRG7U50HF12A Product Details

IRG7U50HF12A Description

 

IRG7U50HF12A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7U50HF12A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IRG7U50HF12A Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRG7U50HF12A Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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