IRG8P45N65UD1-EPBF Description

IRG8P45N65UD1-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG8P45N65UD1-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRG8P45N65UD1-EPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG8P45N65UD1-EPBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display