IRGC100B120KB Description

IRGC100B120KB transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGC100B120KB MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGC100B120KB has the common source configuration.

IRGC100B120KB Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRGC100B120KB Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display