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SIGC28T60EX7SA1

SIGC28T60EX7SA1

SIGC28T60EX7SA1

Infineon Technologies

SIGC28T60EX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC28T60EX7SA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~175°C TJ
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 50A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 150A
RoHS Status ROHS3 Compliant
SIGC28T60EX7SA1 Product Details

SIGC28T60EX7SA1 Description


For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry that combines ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications requiring high voltage and high current switching are some of the most popular ones.



SIGC28T60EX7SA1 Features


  • Interface Power Loads to Logic or Microprocessor Devices at Low Threshold Voltage

  • Drop in Saturation Voltage

  • Ability to Handle High-Pulsed Current



SIGC28T60EX7SA1 Applications


Switching applications


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