IRG7CH50K10EF Description

IRG7CH50K10EF is a type of IGBT developed by Infineon Technologies based on low VCE (ON) Trench IGBT Technology. It is able to deliver high efficiency due to low VCE(on) and low switching losses. Excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, rugged transient performance for increased reliability, tight parameter distribution, and square RBSOA can be provided.

IRG7CH50K10EF Features

Low EMI

Low VCE (ON) Trench IGBT Technology

Low switching losses

Square RBSOA

Positive VCE (ON) temperature coefficient

Tight parameter distribution

IRG7CH50K10EF Applications

Medium power drives

UPS

HEV inverters

Welding

Induction heating