IRGP50B60PD1PBF

new-10%

Manufacturer part number:IRGP50B60PD1PBF

Manufacturer:Infineon Technologies

Description:IGBT 600V 75A 390W TO247AC

Case Package:SOT-23

Datasheet:IRGP50B60PD1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	390W
Current Rating	75A
Number of Elements	1
Element Configuration	Single
Power Dissipation	390W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	30 ns
Transistor Application	POWER CONTROL
Rise Time	10ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	130 ns
Collector Emitter Voltage (VCEO)	2.85V
Max Collector Current	75A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	39 ns
Test Condition	390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 50A
Turn Off Time-Nom (toff)	161 ns
IGBT Type	NPT
Gate Charge	205nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	30ns/130ns
Switching Energy	255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	20ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free