STGB20NB32LZ

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Manufacturer part number:STGB20NB32LZ

Manufacturer:STMicroelectronics

Description:STGB20NB32LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB20NB32LZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	2V
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB20
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	AUTOMOTIVE IGNITION
Rise Time	600ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	375V
Turn On Time	2900 ns
Test Condition	250V, 20A, 1k Ω, 4.5V
Vce(on) (Max) @ Vge, Ic	2V @ 4.5V, 20A
Turn Off Time-Nom (toff)	15900 ns
Gate Charge	51nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	2.3μs/11.5μs
Switching Energy	11.8mJ (off)
Gate-Emitter Thr Voltage-Max	2V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant