IRGPH50F

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Manufacturer part number:IRGPH50F

Manufacturer:Infineon Technologies

Description:IRGPH50F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGPH50F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Power - Max	200W
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	45A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 25A
RoHS Status	Non-RoHS Compliant

IRGPH50F Description

IRGPH50F is a radiation hardened power MOSFET. International Rectifier's RADHard HEXFETE technology provides high performance power MOSFETs for space applications. The power MOSFET IRGPH50F has over a decade of proven performance and reliability in satellite applications. The Infineon IRGPH50F has been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

IRGPH50F Features

Simple Drive Requirements
Low Total Gate Charge
Proton Tolerant
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Single Event Effect (SEE) Hardened
Low RDS(on)

IRGPH50F Applications

geosynchronous and geostationary orbit
Medium Earth Orbit (MEO)
Low Earth Orbit (LEO)
DC to DC converters
motor control