NGTG30N60FWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTG30N60FWG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 22 hours ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
167W
Pin Count
3
Element Configuration
Single
Power Dissipation
167W
Input Type
Standard
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.45V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 30A
IGBT Type
Trench
Gate Charge
170nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
81ns/190ns
Switching Energy
650μJ (on), 650μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
21.4mm
Length
16.25mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
NGTG30N60FWG Product Details
NGTG30N60FWG Description
NGTG30N60FWG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTG30N60FWG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.