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NGTG30N60FWG

NGTG30N60FWG

NGTG30N60FWG

ON Semiconductor

NGTG30N60FWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTG30N60FWG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 167W
Pin Count 3
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
IGBT Type Trench
Gate Charge 170nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 81ns/190ns
Switching Energy 650μJ (on), 650μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
NGTG30N60FWG Product Details

NGTG30N60FWG Description

 

NGTG30N60FWG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTG30N60FWG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

NGTG30N60FWG Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

NGTG30N60FWG Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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