IRGS4086PBF Description

This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. The operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.

IRGS4086PBF Features

• Advanced Trench IGBT Technology

• Optimized for Sustain and Energy Recovery

• Circuits in PDP Applications

• Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency

• High Repetitive Peak Current Capability

• Lead Free Package

IRGS4086PBF Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial