APT25GR120BSCD10

new-10%

Manufacturer part number:APT25GR120BSCD10

Manufacturer:Microsemi Corporation

Description:IGBT 1200V 75A 521W TO247

Case Package:SOT-23

Datasheet:APT25GR120BSCD10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	521W
Input Type	Standard
Power - Max	521W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 25A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 25A
IGBT Type	NPT
Gate Charge	203nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	16ns/122ns
Switching Energy	434μJ (on), 466μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant
Lead Free	Lead Free