IRGSL6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGSL6B60KDPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
90W
Peak Reflow Temperature (Cel)
260
Current Rating
13A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Single
Power Dissipation
90W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
17ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
13A
Reverse Recovery Time
70 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Turn On Time
45 ns
Test Condition
400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 5A
Turn Off Time-Nom (toff)
258 ns
IGBT Type
NPT
Gate Charge
18.2nC
Current - Collector Pulsed (Icm)
26A
Td (on/off) @ 25°C
25ns/215ns
Switching Energy
110μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Fall Time-Max (tf)
27ns
Height
9.652mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.325424
$2.325424
10
$2.193796
$21.93796
100
$2.069619
$206.9619
500
$1.952471
$976.2355
1000
$1.841954
$1841.954
IRGSL6B60KDPBF Product Details
IRGSL6B60KDPBF Description
NPT IGBTs. NPT IGBTs appeared, following PT IGBTs. NPN IGBTs have high ruggedness and are used for hard switching and other inverter applications. Thin-PT IGBTs. Thin-PT is one of the latest IGBT structures that uses thin-wafer technology to improve trade-offs between forward voltage drop and switching speed.
IRGSL6B60KDPBF Features
*Low VCE(on) Non Punch Through IGBT Technology·Low Diode VF.
·10us Short Circuit Capability.·Square RBSOA.
·Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE(on) Temperature Coefficient.
·Lead-Free
+Benchmark Efficiency for Motor Control.·Rugged Transient Performance.·Low EMI.