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IRGSL6B60KDPBF

IRGSL6B60KDPBF

IRGSL6B60KDPBF

Infineon Technologies

IRGSL6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGSL6B60KDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 90W
Peak Reflow Temperature (Cel) 260
Current Rating 13A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 45 ns
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge 18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 27ns
Height 9.652mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.325424 $2.325424
10 $2.193796 $21.93796
100 $2.069619 $206.9619
500 $1.952471 $976.2355
1000 $1.841954 $1841.954
IRGSL6B60KDPBF Product Details

IRGSL6B60KDPBF                    Description


NPT IGBTs. NPT IGBTs appeared, following PT IGBTs. NPN IGBTs have high ruggedness and are used for hard switching and other inverter applications. Thin-PT IGBTs. Thin-PT is one of the latest IGBT structures that uses thin-wafer technology to improve trade-offs between forward voltage drop and switching speed.

 

IRGSL6B60KDPBF                       Features


*Low VCE(on) Non Punch Through IGBT Technology·Low Diode VF.

·10us Short Circuit Capability.·Square RBSOA.

·Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE(on) Temperature Coefficient.

·Lead-Free

+Benchmark Efficiency for Motor Control.·Rugged Transient Performance.·Low EMI.

·Excellent Current Sharing in Parallel Operation.

 


IRGSL6B60KDPBF                            Applications 


general purpose inverters

 solar inverters

 UPS

induction heating

 microwave oven

rice cookers


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