SI7886ADP-T1-GE3

new-10%

Manufacturer part number:SI7886ADP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 25A 5.4W 4.0mohm @ 10V

Case Package:SOT-23

Datasheet:SI7886ADP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	4mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.9W Ta
Element Configuration	Single
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6450pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Rise Time	14ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	43 ns
Turn-Off Delay Time	158 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	6.45nF
Drain to Source Resistance	4mOhm
Rds On Max	4 mΩ
Height	1.04mm
Length	4.9mm
Width	5.89mm
RoHS Status	ROHS3 Compliant