IRL3502PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRL3502PBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Current Rating
110A
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Power Dissipation
140W
Turn On Delay Time
10 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
7mOhm @ 64A, 7V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 4.5V
Rise Time
140ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 7V
Vgs (Max)
±10V
Fall Time (Typ)
130 ns
Turn-Off Delay Time
96 ns
Continuous Drain Current (ID)
110A
Gate to Source Voltage (Vgs)
10V
Drain to Source Breakdown Voltage
20V
Input Capacitance
4.7nF
Drain to Source Resistance
8mOhm
Rds On Max
7 mΩ
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRL3502PBF Product Details
IRL3502PBF Description
IRL3502PBF is a 20v HEXFET? Power MOSFET. The HEXFET Power MOSFET IRL3502PBF was designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.