IRL3713STRRPBF

new-10%

Manufacturer part number:IRL3713STRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 260A D2PAK

Case Package:SOT-23

Datasheet:IRL3713STRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5890pF @ 15V
Current - Continuous Drain (Id) @ 25°C	260A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 4.5V
Rise Time	160ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	57 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	260A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	30V
Height	4.826mm
Length	10.668mm
Width	9.65mm
RoHS Status	ROHS3 Compliant