IRL7472L1TRPBF

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IRL7472L1TRPBF

Manufacturer part number:IRL7472L1TRPBF

Manufacturer:Infineon Technologies

Description:IRL7472L1TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRL7472L1TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	StrongIRFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XBCC-N9
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.8W Ta 341W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	68 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	0.59m Ω @ 195A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	20082pF @ 25V
Current - Continuous Drain (Id) @ 25°C	375A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	174 ns
Continuous Drain Current (ID)	68A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.00045Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	765 mJ
Max Junction Temperature (Tj)	175°C
Height	740μm
Length	9.15mm
Width	7.1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free