IRLB3036GPBF

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IRLB3036GPBF

Manufacturer part number:IRLB3036GPBF

Manufacturer:Infineon Technologies

Description:IRLB3036GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLB3036GPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Power Dissipation	380W
Turn On Delay Time	66 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.4mOhm @ 165A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11210pF @ 50V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 4.5V
Rise Time	220ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	195A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Input Capacitance	11.21nF
Drain to Source Resistance	2.8mOhm
Rds On Max	2.4 mΩ
Height	15.24mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
RoHS Status	RoHS Compliant