IRLH7134TRPBF

new-10%

Manufacturer part number:IRLH7134TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 26A 8PQFN

Case Package:SOT-23

Datasheet:IRLH7134TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 104W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3720pF @ 25V
Current - Continuous Drain (Id) @ 25°C	26A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 4.5V
Rise Time	75ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0033Ohm
Pulsed Drain Current-Max (IDM)	640A
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant