IRLIB4343 IGBT Description
The Class-D audio amplifier applications for this Digital Audio HEXFET8 are its only intended use. In order to achieve low on-resistance per silicon area, this MosFET makes use of the most recent fabrication techniques. Furthermore, to enhance crucial Class-D audio amplifier performance elements like efficacy, THD, and EMI, Gate charge, body-diode reverse recovery, and internal Gate resistance are tuned. The 175°C operational junction temperature and repeating avalanche capabilities of this MosFET are further features. This MOSFET is a highly effective, durable, and dependable component for Class-D audio amplifier applications due to the combination of these qualities.
IRLIB4343 IGBT Features
Low Qr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Low Qg and Qsw for Better THD and Improved Efficiency
Low RDsoN for Improved Efficiency
Key Parameters Optimized for Class-D Audio Amplifier Applications
Advanced Process Technology
IRLIB4343 IGBT Applications
Class-D Audio Amplifiers
Hi-Fi Devices
Robots
Acoustic Weapon
Toys
Smart Home Appliances
