IRLIB4343 IGBT Description

The Class-D audio amplifier applications for this Digital Audio HEXFET8 are its only intended use. In order to achieve low on-resistance per silicon area, this MosFET makes use of the most recent fabrication techniques. Furthermore, to enhance crucial Class-D audio amplifier performance elements like efficacy, THD, and EMI, Gate charge, body-diode reverse recovery, and internal Gate resistance are tuned. The 175°C operational junction temperature and repeating avalanche capabilities of this MosFET are further features. This MOSFET is a highly effective, durable, and dependable component for Class-D audio amplifier applications due to the combination of these qualities.

IRLIB4343 IGBT Features

Low Qr for Better THD and Lower EMI

175°C Operating Junction Temperature for Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

Low Qg and Qsw for Better THD and Improved Efficiency

Low RDsoN for Improved Efficiency

Key Parameters Optimized for Class-D Audio Amplifier Applications

Advanced Process Technology

IRLIB4343 IGBT Applications

Class-D Audio Amplifiers

Hi-Fi Devices

Robots

Acoustic Weapon

Toys

Smart Home Appliances