IRLL014NPBF

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IRLL014NPBF

Manufacturer part number:IRLL014NPBF

Manufacturer:Infineon Technologies

Description:IRLL014NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLL014NPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, FAST SWITCHING
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	2.8A
Drain-source On Resistance-Max	0.14Ohm
Pulsed Drain Current-Max (IDM)	16A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	32 mJ
RoHS Status	ROHS3 Compliant