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FQP630TSTU

FQP630TSTU

FQP630TSTU

ON Semiconductor

FQP630TSTU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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FQP630TSTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 78W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
FQP630TSTU Product Details

FQP630TSTU Description


FQP630TSTU is a type of QFET? N-channel enhancement-mode MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. Based on this technology, it is able to provide low on-state resistance, fast switching speed, and withstand high energy pulse in the avalanche and commutation mode. As a result, FQP630TSTU is capable of providing considerable benefits for motor control, high-efficiency switching DC/DC converters, DC-AC converters for uninterrupted power supply, and switch-mode power supply.



FQP630TSTU Features


  • DMOS technology

  • Low on-state resistance

  • Fast switching speed

  • High dv/dt capability

  • Available in the TO-220 package



FQP630TSTU Applications


  • Motor control

  • High-efficiency switching DC/DC converters

  • DC-AC converters for uninterrupted power supply

  • Switch-mode power supply


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