IRLL024ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLL024ZPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
60MOhm
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Current Rating
5A
Number of Elements
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Power Dissipation
2.8W
Turn On Delay Time
8.6 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
60m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
11nC @ 5V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Nominal Vgs
3 V
Height
1.4478mm
Length
6.6802mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.38570
$0.7714
IRLL024ZPBF Product Details
IRLL024ZPBF Description
The IRLL024ZPBF is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRLL024ZPBF an extremely efficient and reliable device for use in a wide variety of applications