IPS118N10N G

new-10%

Manufacturer part number:IPS118N10N G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 75A TO251-3

Case Package:SOT-23

Datasheet:IPS118N10N G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	4320pF @ 50V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-251AA
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0118Ohm
Pulsed Drain Current-Max (IDM)	300A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	RoHS Compliant