IRLL2703 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLL2703 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
HEXFET®
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
530pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.9A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Drain Current-Max (Abs) (ID)
5.5A
Drain-source On Resistance-Max
0.045Ohm
Pulsed Drain Current-Max (IDM)
16A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
180 mJ
RoHS Status
Non-RoHS Compliant
IRLL2703 Product Details
IRLL2703 Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to provide exceptionally low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. The SOT-223 package is made to be surface-mounted utilizing infrared, vapor phase, or wave soldering processes. In addition to having the same simple automatic pick-and-place functionality as regular SOT or SOIC packages, this package's special design offers increased thermal performance thanks to a larger tab for heatsinking. In a typical surface mount application, power dissipation of 1.0W is attainable.