IXTV102N20T

new-10%

Manufacturer part number:IXTV102N20T

Manufacturer:IXYS

Description:MOSFET N-CH 200V 102A PLUS220

Case Package:SOT-23

Datasheet:IXTV102N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	TrenchHV™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	750W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	102A Tc
Gate Charge (Qg) (Max) @ Vgs	114nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	102A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	1200 mJ
RoHS Status	RoHS Compliant