IRLMS1902TR

new-10%

Manufacturer part number:IRLMS1902TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 3.2A 6-TSOP

Case Package:SOT-23

Datasheet:IRLMS1902TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.7W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	7nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Drain Current-Max (Abs) (ID)	3.2A
Drain-source On Resistance-Max	0.1Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	20V
RoHS Status	Non-RoHS Compliant