IRLR2703TRR

new-10%

Manufacturer part number:IRLR2703TRR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 23A DPAK

Case Package:SOT-23

Datasheet:IRLR2703TRR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	45W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.045Ohm
Pulsed Drain Current-Max (IDM)	96A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	Non-RoHS Compliant