IRLR2905ZPBF

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Manufacturer part number:IRLR2905ZPBF

Manufacturer:Infineon Technologies

Description:IRLR2905ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR2905ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	110W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 5V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.28000	$0.28
500	$0.2772	$138.6
1000	$0.2744	$274.4
1500	$0.2716	$407.4
2000	$0.2688	$537.6
2500	$0.266	$665

IRLR2905ZPBF Description

The IRLR2905ZPBF is a 55V single N-channel HEXFET? Power MOSFET utilizing the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this Infineon IRLR2905ZPBF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. Its features combine to make this design an extremely efficient and reliable device for wide variety of applications.