FCI11N60

new-10%

Manufacturer part number:FCI11N60

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Rail

Case Package:SOT-23

Datasheet:FCI11N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	SuperFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Power Dissipation	125W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1490pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Rise Time	98ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	56 ns
Turn-Off Delay Time	119 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
RoHS Status	RoHS Compliant
Lead Free	Lead Free