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IRLR3705Z

IRLR3705Z

IRLR3705Z

Infineon Technologies

IRLR3705Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR3705Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional FeatureLOGIC LEVEL COMPATIBLE
HTS Code8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 130W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 110 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:1304 items

Pricing & Ordering

QuantityUnit PriceExt. Price
300$2.26153$678.459

IRLR3705Z Product Details

IRLR3705Z Description


The SO-8 has been modified with custom lead frames to enhance thermal characteristics and dual-chip capabilities, making it ideal for a variety of power applications. With these improvements, multiple devices can be used in one application, greatly reducing circuit board space. The package is designed for gas phase, infrared or wave soldering technology. In typical PCB placement applications, it is possible to consume more than 0.8W.

IRLR3705Z Features

?Adavanced Process Technology
?Ultra Low On-Resistance
?Dual N-ChannelMOSFET Surface Mount
?Available in Tape &Reel
?Dynamic dv/dt Rating
?Fast Switching
?Lead-Free

IRLR3705Z applications

PCB placement applications
power applications

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