IRLR3717PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR3717PBF Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
4MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
120A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
89W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
89W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2830pF @ 10V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 4.5V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
5.8 ns
Continuous Drain Current (ID)
120A
Threshold Voltage
2V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
20V
Pulsed Drain Current-Max (IDM)
460A
Avalanche Energy Rating (Eas)
460 mJ
Recovery Time
33 ns
Height
2.26mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1691 items
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IRLR3717PBF Product Details
IRLR3717PBF Description
IRLR3717PBF is a 20V N-Channel HEXFET Power MOSFET packaged in a D-Pak. The IRLR3717PBF may be replaced with the IRLR7843, IRLR8743 instead of the IRLR3717PBF.
IRLR3717PBF Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Type: n-channel
Drain-to-Source Breakdown Voltage: 20 V
Gate-to-Source Voltage, max: ?à20 V
Drain-Source On-State Resistance, max: 4.2 m|?
Continuous Drain Current: 120 A
Total Gate Charge: 21 nC
Power Dissipation: 89 W
Package: D-PAK
IRLR3717PBF Applications
Lead-Free
High-Frequency Synchronous Buck Converters for Computer Processor Power
High-Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
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