SUP40N10-30-GE3

new-10%

Manufacturer part number:SUP40N10-30-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 38.5A TO220AB

Case Package:SOT-23

Datasheet:SUP40N10-30-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.1W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	30m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38.5A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	38.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	75A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	61 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant