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IRLR4343-701PBF

IRLR4343-701PBF

IRLR4343-701PBF

Infineon Technologies

MOSFET N-CH 55V 26A DPAK

SOT-23

IRLR4343-701PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-4, DPak (3 Leads + Tab)
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 79W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 50V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $0.92643 $555.858

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