IRLR4343PBF

new-10%

Manufacturer part number:IRLR4343PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 26A DPAK

Case Package:SOT-23

Datasheet:IRLR4343PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	D-Pak
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-40°C
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	26A
Power Dissipation-Max	79W Tc
Element Configuration	Single
Power Dissipation	79W
Turn On Delay Time	5.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 50V
Current - Continuous Drain (Id) @ 25°C	26A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Rise Time	19ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.3 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Input Capacitance	740pF
Drain to Source Resistance	65mOhm
Rds On Max	50 mΩ
Height	2.2606mm
Length	6.7056mm
Width	6.22mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free