IRLR6225PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLR6225PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Published
2010
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
63W Tc
Element Configuration
Single
Power Dissipation
63W
Turn On Delay Time
9.7 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4m Ω @ 21A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
3770pF @ 10V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
72nC @ 4.5V
Rise Time
37ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
52 ns
Turn-Off Delay Time
63 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
800mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
Recovery Time
53 ns
Nominal Vgs
800 mV
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
IRLR6225PBF Product Details
IRLR6225PBF Description
IRLR6225PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. It is able to provide multi-vendor capability based on the industry-standard pinout. It is compatible with existing surface mount techniques for easier manufacturing. All of these enable the power MOSFET IRLR6225PBF to be efficient and reliable in various applications.