IXFN48N55

new-10%

Manufacturer part number:IXFN48N55

Manufacturer:IXYS

Description:MOSFET N-CH 550V 48A SOT-227B

Case Package:SOT-23

Datasheet:IXFN48N55 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Drain to Source Voltage (Vdss)	550V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	48A
Drain-source On Resistance-Max	0.11Ohm
Pulsed Drain Current-Max (IDM)	192A
DS Breakdown Voltage-Min	550V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant