IRLR8256PBF

new-10%

Manufacturer part number:IRLR8256PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 81A DPAK

Case Package:SOT-23

Datasheet:IRLR8256PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	5.7MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	63W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	DRAIN
Turn On Delay Time	9.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 13V
Current - Continuous Drain (Id) @ 25°C	81A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	81A
Threshold Voltage	1.8V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Avalanche Energy Rating (Eas)	86 mJ
Recovery Time	29 ns
Nominal Vgs	1.8 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free