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RJK2557DPA-WS#J0

RJK2557DPA-WS#J0

RJK2557DPA-WS#J0

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 128m Ω @ 8.5A, 10V ±30V 1250pF @ 25V 20nC @ 10V 250V 8-PowerWDFN

SOT-23

RJK2557DPA-WS#J0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 128m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK2557DPA-WS#J0 Product Details

RJK2557DPA-WS#J0 Overview


A device's maximum input capacitance is 1250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

RJK2557DPA-WS#J0 Features


a 250V drain to source voltage (Vdss)


RJK2557DPA-WS#J0 Applications


There are a lot of Renesas Electronics America
RJK2557DPA-WS#J0 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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