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IRLR8503

IRLR8503

IRLR8503

Infineon Technologies

IRLR8503 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR8503 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
IRLR8503 Product Details

IRLR8503 Description


This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC  converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all  parameters  that  are  critical  in  synchronous  buck converters including RDS(on), gate charge and dv/dt-induced turn-on immunity. The IRLR8503  offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.



IRLR8503 Features


  • P-Channel Application-Specific MOSFET

  • Ideal for CPU Core DC-DC Converters

  • Low Conduction Losses

  • Minimizes Parallel MOSFETs for high current applications



IRLR8503 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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