IRLR8503 Description

This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC  converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all  parameters  that  are  critical  in  synchronous  buck converters including RDS(on), gate charge and dv/dt-induced turn-on immunity. The IRLR8503  offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.

IRLR8503 Features

• P-Channel Application-Specific MOSFET

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Minimizes Parallel MOSFETs for high current applications

IRLR8503 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial