IRLU2905PBF

new-10%

Manufacturer part number:IRLU2905PBF

Manufacturer:Infineon Technologies

Description:INFINEON IRLU2905PBF MOSFET Transistor, N Channel, 42 A, 55 V, 27 mohm, 10 V, 2 V

Case Package:SOT-23

Datasheet:IRLU2905PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	27mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Max Power Dissipation	110W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	42A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 5V
Rise Time	84ns
Fall Time (Typ)	15 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	42A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Nominal Vgs	2 V
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free