IRF5803D2PBF

new-10%

Manufacturer part number:IRF5803D2PBF

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 40V 3.4A 8-SOIC

Case Package:SOT-23

Datasheet:IRF5803D2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-40V
Technology	MOSFET (Metal Oxide)
Current Rating	-3.4A
Power Dissipation-Max	2W Ta
Power Dissipation	2W
Turn On Delay Time	43 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.4A Ta
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Rise Time	550ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	-3.4A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-40V
Input Capacitance	1.11nF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	190mOhm
Rds On Max	112 mΩ
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free