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IRLU3714PBF

IRLU3714PBF

IRLU3714PBF

Infineon Technologies

MOSFET N-CH 20V 36A I-PAK

SOT-23

IRLU3714PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package I-PAK
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 20mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 36A
Number of Elements 1
Power Dissipation-Max 47W Tc
Element Configuration Single
Power Dissipation 47W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 10V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Rise Time 78ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 670pF
Drain to Source Resistance 28mOhm
Rds On Max 20 mΩ
Nominal Vgs 3 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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