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R6030ENZ1C9

R6030ENZ1C9

R6030ENZ1C9

ROHM Semiconductor

N-Channel Tube 130m Ω @ 14.5A, 10V ±20V 2100pF @ 25V 85nC @ 10V 600V TO-247-3

SOT-23

R6030ENZ1C9 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 120W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 30A
Threshold Voltage 4V
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 600V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.261920 $19.26192
10 $18.171623 $181.71623
100 $17.143040 $1714.304
500 $16.172679 $8086.3395
1000 $15.257245 $15257.245
R6030ENZ1C9 Product Details

R6030ENZ1C9 Overview


A device's maximal input capacitance is 2100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

R6030ENZ1C9 Features


a continuous drain current (ID) of 30A
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


R6030ENZ1C9 Applications


There are a lot of ROHM Semiconductor
R6030ENZ1C9 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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