IRLU7843PBF

new-10%

Manufacturer part number:IRLU7843PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 161A I-PAK

Case Package:SOT-23

Datasheet:IRLU7843PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	161A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4380pF @ 15V
Current - Continuous Drain (Id) @ 25°C	161A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	42ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	161A
Threshold Voltage	2.3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	620A
Avalanche Energy Rating (Eas)	1440 mJ
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free