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PZTA14E6327HTSA1

PZTA14E6327HTSA1

PZTA14E6327HTSA1

Infineon Technologies

PZTA14E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

PZTA14E6327HTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number PZTA14
Number of Elements 1
Polarity NPN
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 20000
Radiation Hardening No
RoHS Status RoHS Compliant
PZTA14E6327HTSA1 Product Details

PZTA14E6327HTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Parts of this part have transition frequencies of 125MHz.A maximum collector current of 300mA volts is possible.

PZTA14E6327HTSA1 Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

PZTA14E6327HTSA1 Applications


There are a lot of Infineon Technologies PZTA14E6327HTSA1 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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