SI3443DV

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Manufacturer part number:SI3443DV

Manufacturer:Infineon Technologies

Description:SI3443DV datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SI3443DV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW ON-RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	65m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1079pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.4A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
JEDEC-95 Code	MO-193AA
Drain Current-Max (Abs) (ID)	4.4A
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	31 mJ
RoHS Status	Non-RoHS Compliant