IRF6618TR1

new-10%

Manufacturer part number:IRF6618TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 30A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6618TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MT
Number of Pins	7
Supplier Device Package	DIRECTFET™ MT
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Resistance	2.2mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	150A
Power Dissipation-Max	2.8W Ta 89W Tc
Power Dissipation	2.8W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5640pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 4.5V
Rise Time	71ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.1 ns
Turn-Off Delay Time	27 ns
Reverse Recovery Time	43 ns
Continuous Drain Current (ID)	170A
Threshold Voltage	1.64V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	5.64nF
Rds On Max	2.2 mΩ
Nominal Vgs	1.64 V
Width	5.05mm
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free