SI1304BDL-T1-GE3

new-10%

Manufacturer part number:SI1304BDL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 0.9A SC-70-3

Case Package:SOT-23

Datasheet:SI1304BDL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	340mW Ta 370mW Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	340mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	270m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	900mA Tc
Gate Charge (Qg) (Max) @ Vgs	2.7nC @ 4.5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	5 ns
Continuous Drain Current (ID)	850mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.85A
Drain-source On Resistance-Max	0.27Ohm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant