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SIGC18T60SNCX1SA2

SIGC18T60SNCX1SA2

SIGC18T60SNCX1SA2

Infineon Technologies

SIGC18T60SNCX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC18T60SNCX1SA2 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Test Condition 400V, 20A, 16Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
IGBT Type NPT
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 36ns/250ns
RoHS Status ROHS3 Compliant
SIGC18T60SNCX1SA2 Product Details

SIGC18T60SNCX1SA2 Description


SIGC18T60SNCX1SA2 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SIGC18T60SNCX1SA2 operates between -55°C~150°C TJ, and its maximum collector current is 40A. The SIGC18T60SNCX1SA2 has three pins and it is available in Tube packaging way. SIGC18T60SNCX1SA2 has a 1350V Voltage - Collector Emitter Breakdown (Max) value.



SIGC18T60SNCX1SA2 Features


  • 600V NPT technology

  • 100μm chip

  • short circuit prove

  • positive temperature coefficient

  • easy paralleling



SIGC18T60SNCX1SA2 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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