SIGC18T60UNX1SA1                                  Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

SIGC18T60UNX1SA1                                Features

? 30% lower Eoff compared to previous generation

? Short circuit withstand time – 10 μs

? Designed for operation above 30 kHz

? NPT-Technology for 600V applications offers:

- parallel switching capability

- moderate Eoff increase with temperature

- very tight parameter distribution

? High ruggedness, temperature stable behaviour

? Pb-free lead plating; RoHS compliant

? Qualified according to JEDEC1

 for target applications

SIGC18T60UNX1SA1                                Applications

·Induction cooking

nverterized microwave ovens

·Resonant converters